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| 1. general description the 74aup1t45 is a high-performance, low-power, low-voltage, si-gate cmos device, superior to most advanced cmos compatible ttl families. the 74aup1t45 is a single bit transceiver featuring two data input-outputs (a and b), a direction control input (dir) and dual supply pins (v cc(a) and v cc(b) ) which enable bidirectional level translation. both v cc(a) and v cc(b) can be supplied at any voltage between 1.1 v and 3.6 v making the device suitable for interfacing between any of the low voltage nodes (1.2 v, 1.5 v, 1.8 v, 2.5 v and 3.3 v). pins a and dir are referenced to v cc(a) and pin b is referenced to v cc(b) . a high on dir allows transmission from a to b and a low on dir allows transmission from b to a. schmitt trigger action on all inputs makes the circuit tolerant of slower input rise and fall times across the entire v cc(a) and v cc(b) ranges. the device ensures low static and dynamic power consumption and is fully speci?ed for partial power-down applications using i off . the i off circuitry disables the output, preventing any damaging back?ow current through the device when it is powered down. in suspend mode when either v cc(a) or v cc(b) are at gnd, both a and b are in the high-impedance off-state. 2. features n wide supply voltage range: u v cc(a) : 1.1 v to 3.6 v u v cc(b) : 1.1 v to 3.6 v n high noise immunity n complies with jedec standards: u jesd8-7 (1.2 v to 1.95 v) u jesd8-5 (1.8 v to 2.7 v) u jesd8-b (2.7 v to 3.6 v) n esd protection: u hbm jesd22-a114-d class 3a exceeds 5000 v u mm jesd22-a115-a exceeds 200 v u cdm jesd22-c101-c exceeds 1000 v n low static power consumption; i cc = 0.9 m a (maximum) n suspend mode n latch-up performance exceeds 100 ma per jesd 78 class ii n inputs accept voltages up to 3.6 v n low noise overshoot and undershoot < 10 % of v cc n i off circuitry provides partial power-down mode operation 74aup1t45 low-power dual supply translating transceiver; 3-state rev. 01 18 october 2006 product data sheet
74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 2 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state n multiple package options n speci?ed from - 40 cto+85 c and - 40 c to +125 c 3. ordering information 4. marking 5. functional diagram table 1. ordering information type number package temperature range name description version 74AUP1T45GW - 40 c to +125 c sc-88 plastic surface-mounted package; 6 leads sot363 74aup1t45gm - 40 c to +125 c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 1.45 0.5 mm sot886 74aup1t45gf - 40 c to +125 c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 1 0.5 mm sot891 table 2. marking type number marking code 74AUP1T45GW a5 74aup1t45gm a5 74aup1t45gf a5 fig 1. logic symbol fig 2. logic diagram 001aae962 5 3 dir 4 b a v cc(a) v cc(b) 001aae963 dir b a v cc(a) v cc(b) 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 3 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state 6. pinning information 6.1 pinning 6.2 pin description 7. functional description [1] h = high voltage level; l = low voltage level; x = dont care. [2] the dir input circuit is referenced to v cc(a) . [3] the input circuit of the data i/os are always active. fig 3. pin con?guration sot363 (sc-88) fig 4. pin con?guration sot886 (xson6) fig 5. pin con?guration sot891 (xson6) 74aup1t45 v cc(a) v cc(b) gnd ab 001aae964 1 2 3 6 dir 5 4 74aup1t45 gnd 001aae965 v cc(a) a dir v cc(b) b transparent top view 2 3 1 5 4 6 74aup1t45 gnd 001aae966 v cc(a) a dir v cc(b) b transparent top view 2 3 1 5 4 6 table 3. pin description symbol pin description v cc(a) 1 supply voltage port a gnd 2 ground (0 v) a 3 data input or output a b 4 data input or output b dir 5 direction control dir v cc(b) 6 supply voltage port b table 4. function table [1] supply voltage input [2] input/output [3] v cc(a) , v cc(b) dir a b 1.1 v to 3.6 v l a = b input 1.1 v to 3.6 v h input b = a gnd x suspend mode suspend mode 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 4 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state 8. limiting values [1] the minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] the values of v cc(a) and v cc(b) are provided in the recommended operating conditions; see t ab le 6 . [3] for sc-88 packages: above 87.5 c the value of p tot derates linearly with 4.0 mw/k. for xson6 packages: above 45 c the value of p tot derates linearly with 2.4 mw/k. 9. recommended operating conditions [1] v cco is the supply voltage associated with the output port. table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min max unit v cc(a) supply voltage port a - 0.5 +4.6 v v cc(b) supply voltage port b - 0.5 +4.6 v i ik input clamping current v i <0v - - 50 ma v i input voltage [1] - 0.5 +4.6 v i ok output clamping current v o <0v - - 50 ma v o output voltage active mode a port [1] [2] - 0.5 v cc(a) + 0.5 v b port [1] [2] - 0.5 v cc(b) + 0.5 v suspend or 3-state mode [1] [2] - 0.5 +4.6 v i o output current v o =0vtov cc - 20 ma i cc supply current - 50 ma i gnd ground current - - 50 ma t stg storage temperature - 65 +150 c p tot total power dissipation t amb = - 40 c to +125 c [3] - 250 mw table 6. recommended operating conditions symbol parameter conditions min max unit v cc(a) supply voltage port a 1.1 3.6 v v cc(b) supply voltage port b 1.1 3.6 v v i input voltage 0 3.6 v v o output voltage [1] 0v cco v t amb ambient temperature - 40 +125 c d t/ d v input transition rise and fall rate v cci =1.1 v to 3.6 v 0 200 ns/v 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 5 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state 10. static characteristics table 7. static characteristics at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit t amb = 25 c v ih high-level input voltage data input [1] [3] v cci = 1.1 v to 1.95 v 0.65 v cci -- v v cci = 2.3 v to 2.7 v 1.6 - - v v cci = 3.0 v to 3.6 v 2.0 - - v dir input [1] [4] v cci = 1.1 v to 1.95 v 0.65 v cc(a) -- v v cci = 2.3 v to 2.7 v 1.6 - - v v cci = 3.0 v to 3.6 v 2.0 - - v v il low-level input voltage data input [1] [3] v cci = 1.1 v to 1.95 v - - 0.35 v cci v v cci = 2.3 v to 2.7 v - - 0.7 v v cci = 3.0 v to 3.6 v - - 0.9 v dir input [1] [4] v cci = 1.1 v to 1.95 v - - 0.35 v cc(a) v v cci = 2.3 v to 2.7 v - - 0.7 v v cci = 3.0 v to 3.6 v - - 0.9 v v oh high-level output voltage v i = v ih i o = - 20 m a; v cc(a) =v cc(b) = 1.1 v to 3.6 v [2] v cco - 0.1 - - v i o = - 1.1 ma; v cc(a) = v cc(b) = 1.1 v [2] 0.75 v cco -- v i o = - 1.7 ma; v cc(a) = v cc(b) = 1.4 v 1.11 - - v i o = - 1.9 ma; v cc(a) = v cc(b) = 1.65 v 1.32 - - v i o = - 2.3 ma; v cc(a) = v cc(b) = 2.3 v 2.05 - - v i o = - 3.1 ma; v cc(a) = v cc(b) = 2.3 v 1.9 - - v i o = - 2.7 ma; v cc(a) = v cc(b) = 3.0 v 2.72 - - v i o = - 4.0 ma; v cc(a) = v cc(b) = 3.0 v 2.6 - - v v ol low-level output voltage v i = v il i o = 20 m a; v cc(a) =v cc(b) = 1.1 v to 3.6 v - - 0.1 v i o = 1.1 ma; v cc(a) = v cc(b) = 1.1 v [2] - - 0.3 v cco v i o = 1.7 ma; v cc(a) = v cc(b) = 1.4 v - - 0.31 v i o = 1.9 ma; v cc(a) = v cc(b) = 1.65 v - - 0.31 v i o = 2.3 ma; v cc(a) = v cc(b) = 2.3 v - - 0.31 v i o = 3.1 ma; v cc(a) = v cc(b) = 2.3 v - - 0.44 v i o = 2.7 ma; v cc(a) = v cc(b) = 3.0 v - - 0.31 v i o = 4.0 ma; v cc(a) = v cc(b) = 3.0 v - - 0.44 v i i input leakage current dir input; v i = gnd to v cc(a) ; v cc(a) =v cc(b) = 1.1 v to 3.6 v -- 0.1 m a 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 6 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state i oz off-state output current a or b port; v i = v ih or v il ; v o = 0 v to v cco ; v cc(a) =v cc(b) = 1.1 v to 3.6 v [2] -- 0.1 m a i off power-off leakage current a port; v i or v o = 0 v to 3.6 v; v cc(a) =0v;v cc(b) = 1.1 v to 3.6 v -- 0.2 m a b port; v i or v o = 0 v to 3.6 v; v cc(b) =0v;v cc(a) = 1.1 v to 3.6 v -- 0.2 m a dir input; v i or v o = 0 v to 3.6 v; v cc(a) =0v;v cc(b) = 1.1 v to 3.6 v -- 0.2 m a d i off additional power-off leakage current a port; v i or v o = 0 v to 3.6 v; v cc(a) = 0 v to 0.2 v; v cc(b) = 1.1 v to 3.6 v -- 0.2 m a b port; v i or v o = 0 v to 3.6 v; v cc(b) = 0 v to 0.2 v; v cc(a) = 1.1 v to 3.6 v -- 0.2 m a dir input; v i or v o = 0 v to 3.6 v; v cc(a) = 0 v to 0.2 v; v cc(b) = 1.1 v to 3.6 v -- 0.2 m a i cc supply current a port; v i = gnd or v cci ; i o = 0 a [1] v cc(a) = v cc(b) = 1.1 v to 3.6 v - - 0.5 m a v cc(a) = 3.6 v; v cc(b) = 0 v - - 0.5 m a v cc(a) = 0 v; v cc(b) = 3.6 v - 0 - m a b port; v i = gnd or v cci ; i o = 0 a [1] v cc(a) = v cc(b) = 1.1 v to 3.6 v - - 0.5 m a v cc(a) = 3.6 v; v cc(b) = 0 v - 0 - m a v cc(a) = 0 v; v cc(b) = 3.6 v - - 0.5 m a a plus b port (i cc(a) + i cc(b) ); i o = 0 a; v i = gnd or v cci ; v cc(a) =v cc(b) = 1.1 v to 3.6 v [1] - - 0.5 m a d i cc additional supply current a port; v cc(a) = v cc(b) = 3.3 v; aportatv cc(a) - 0.6 v; dir at v cc(a) ; b port = open --40 m a b port; v cc(a) = v cc(b) = 3.3 v; bportatv cc(b) - 0.6 v; dir at gnd; a port = open --40 m a dir input; v cc(a) = v cc(b) = 3.3 v; aportatv cc(a) or gnd; b port = open; dir at v cc(a) - 0.6 v --40 m a c i input capacitance dir input; v i = gnd or v cc(a) ; v cc(a) =v cc(b) = 1.1 v to 3.6 v - 0.9 - pf c i/o input/output capacitance a and b port; suspend mode; v cci = 0 v; v cco = 1.1 v to 3.6 v; v o =v cco or gnd [1] [2] - 2.0 - pf table 7. static characteristics continued at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 7 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state t amb = - 40 c to +85 c v ih high-level input voltage data input [1] [3] v cci = 1.1 v to 1.95 v 0.65 v cci -- v v cci = 2.3 v to 2.7 v 1.6 - - v v cci = 3.0 v to 3.6 v 2.0 - - v dir input [1] [4] v cci = 1.1 v to 1.95 v 0.65 v cc(a) -- v v cci = 2.3 v to 2.7 v 1.6 - - v v cci = 3.0 v to 3.6 v 2.0 - - v v il low-level input voltage data input [1] [3] v cci = 1.1 v to 1.95 v - - 0.35 v cci v v cci = 2.3 v to 2.7 v - - 0.7 v v cci = 3.0 v to 3.6 v - - 0.9 v dir input [1] [4] v cci = 1.1 v to 1.95 v - - 0.35 v cc(a) v v cci = 2.3 v to 2.7 v - - 0.7 v v cci = 3.0 v to 3.6 v - - 0.9 v v oh high-level output voltage v i = v ih i o = - 20 m a; v cc(a) =v cc(b) = 1.1 v to 3.6 v [2] v cco - 0.1 - - v i o = - 1.1 ma; v cc(a) = v cc(b) = 1.1 v [2] 0.7 v cco -- v i o = - 1.7 ma; v cc(a) = v cc(b) = 1.4 v 1.03 - - v i o = - 1.9 ma; v cc(a) = v cc(b) = 1.65 v 1.30 - - v i o = - 2.3 ma; v cc(a) = v cc(b) = 2.3 v 1.97 - - v i o = - 3.1 ma; v cc(a) = v cc(b) = 2.3 v 1.85 - - v i o = - 2.7 ma; v cc(a) = v cc(b) = 3.0 v 2.67 - - v i o = - 4.0 ma; v cc(a) = v cc(b) = 3.0 v 2.55 - - v v ol low-level output voltage v i = v il i o = 20 m a; v cc(a) =v cc(b) = 1.1 v to 3.6 v - - 0.1 v i o = 1.1 ma; v cc(a) = v cc(b) = 1.1 v [2] - - 0.3 v cco v i o = 1.7 ma; v cc(a) = v cc(b) = 1.4 v - - 0.37 v i o = 1.9 ma; v cc(a) = v cc(b) = 1.65 v - - 0.35 v i o = 2.3 ma; v cc(a) = v cc(b) = 2.3 v - - 0.33 v i o = 3.1 ma; v cc(a) = v cc(b) = 2.3 v - - 0.45 v i o = 2.7 ma; v cc(a) = v cc(b) = 3.0 v - - 0.33 v i o = 4.0 ma; v cc(a) = v cc(b) = 3.0 v - - 0.45 v i i input leakage current dir input; v i = gnd to v cc(a) ; v cc(a) =v cc(b) = 1.1 v to 3.6 v -- 0.5 m a i oz off-state output current a or b port; v i = v ih or v il ; v o = 0 v to v cco ; v cc(a) =v cc(b) = 1.1 v to 3.6 v [2] -- 0.5 m a table 7. static characteristics continued at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 8 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state i off power-off leakage current a port; v i or v o = 0 v to 3.6 v; v cc(a) =0v;v cc(b) = 1.1 v to 3.6 v -- 0.5 m a b port; v i or v o = 0 v to 3.6 v; v cc(b) =0v;v cc(a) = 1.1 v to 3.6 v -- 0.5 m a dir input; v i or v o = 0 v to 3.6 v; v cc(a) =0v;v cc(b) = 1.1 v to 3.6 v -- 0.5 m a d i off additional power-off leakage current a port; v i or v o = 0 v to 3.6 v; v cc(a) = 0 v to 0.2 v; v cc(b) = 1.1 v to 3.6 v -- 0.6 m a b port; v i or v o = 0 v to 3.6 v; v cc(b) = 0 v to 0.2 v; v cc(a) = 1.1 v to 3.6 v -- 0.6 m a dir input; v i or v o = 0 v to 3.6 v; v cc(a) = 0 v to 0.2 v; v cc(b) = 1.1 v to 3.6 v -- 0.6 m a i cc supply current a port; v i = gnd or v cci ; i o = 0 a [1] v cc(a) = v cc(b) = 1.1 v to 3.6 v - - 0.9 m a v cc(a) = 3.6 v; v cc(b) = 0 v - - 0.9 m a v cc(a) = 0 v; v cc(b) = 3.6 v - 0 - m a b port; v i = gnd or v cci ; i o = 0 a [1] v cc(a) = v cc(b) = 1.1 v to 3.6 v - - 0.9 m a v cc(a) = 3.6 v; v cc(b) = 0 v - 0 - m a v cc(a) = 0 v; v cc(b) = 3.6 v - - 0.9 m a a plus b port (i cc(a) + i cc(b) ); i o = 0 a; v i = gnd or v cci ; v cc(a) =v cc(b) = 1.1 v to 3.6 v [1] - - 0.9 m a d i cc additional supply current a port; v cc(a) = v cc(b) = 3.3 v; aportatv cc(a) - 0.6 v; dir at v cc(a) ; b port = open --50 m a b port; v cc(a) = v cc(b) = 3.3 v; bportatv cc(b) - 0.6 v; dir at gnd; a port = open --50 m a dir input; v cc(a) = v cc(b) = 3.3 v; aportatv cc(a) or gnd; b port = open; dir at v cc(a) - 0.6 v --50 m a t amb = - 40 c to +125 c v ih high-level input voltage data input [1] [3] v cci = 1.1 v to 1.95 v 0.7 v cci -- v v cci = 2.3 v to 2.7 v 1.6 - - v v cci = 3.0 v to 3.6 v 2.0 - - v dir input [1] [4] v cci = 1.1 v to 1.95 v 0.7 v cc(a) -- v v cci = 2.3 v to 2.7 v 1.6 - - v v cci = 3.0 v to 3.6 v 2.0 - - v table 7. static characteristics continued at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 9 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state v il low-level input voltage data input [1] [3] v cci = 1.1 v to 1.95 v - - 0.3 v cci v v cci = 2.3 v to 2.7 v - - 0.7 v v cci = 3.0 v to 3.6 v - - 0.9 v dir input [1] [4] v cci = 1.1 v to 1.95 v - - 0.3 v cc(a) v v cci = 2.3 v to 2.7 v - - 0.7 v v cci = 3.0 v to 3.6 v - - 0.9 v v oh high-level output voltage v i = v ih i o = - 20 m a; v cc(a) =v cc(b) = 1.1 v to 3.6 v [2] v cco - 0.11 - - v i o = - 1.1 ma; v cc(a) = v cc(b) = 1.1 v [2] 0.6 v cco -- v i o = - 1.7 ma; v cc(a) = v cc(b) = 1.4 v 0.93 - - v i o = - 1.9 ma; v cc(a) = v cc(b) = 1.65 v 1.17 - - v i o = - 2.3 ma; v cc(a) = v cc(b) = 2.3 v 1.77 - - v i o = - 3.1 ma; v cc(a) = v cc(b) = 2.3 v 1.67 - - v i o = - 2.7 ma; v cc(a) = v cc(b) = 3.0 v 2.40 - - v i o = - 4.0 ma; v cc(a) = v cc(b) = 3.0 v 2.30 - - v v ol low-level output voltage v i = v il i o = 20 m a; v cc(a) =v cc(b) = 1.1 v to 3.6 v - - 0.11 v i o = 1.1 ma; v cc(a) = v cc(b) = 1.1 v [2] - - 0.33 v cco v i o = 1.7 ma; v cc(a) = v cc(b) = 1.4 v - - 0.41 v i o = 1.9 ma; v cc(a) = v cc(b) = 1.65 v - - 0.39 v i o = 2.3 ma; v cc(a) = v cc(b) = 2.3 v - - 0.36 v i o = 3.1 ma; v cc(a) = v cc(b) = 2.3 v - - 0.50 v i o = 2.7 ma; v cc(a) = v cc(b) = 3.0 v - - 0.36 v i o = 4.0 ma; v cc(a) = v cc(b) = 3.0 v - - 0.50 v i i input leakage current dir input; v i = gnd to v cc(a) ; v cc(a) =v cc(b) = 1.1 v to 3.6 v -- 0.75 m a i oz off-state output current a or b port; v i = v ih or v il ; v o = 0 v to v cco ; v cc(a) =v cc(b) = 1.1 v to 3.6 v [2] -- 0.75 m a i off power-off leakage current a port; v i or v o = 0 v to 3.6 v; v cc(a) =0v;v cc(b) = 1.1 v to 3.6 v -- 0.75 m a b port; v i or v o = 0 v to 3.6 v; v cc(b) =0v;v cc(a) = 1.1 v to 3.6 v -- 0.75 m a dir input; v i or v o = 0 v to 3.6 v; v cc(a) =0v;v cc(b) = 1.1 v to 3.6 v -- 0.75 m a table 7. static characteristics continued at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 10 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state [1] v cci is the supply voltage associated with the data input port. [2] v cco is the supply voltage associated with the output port. [3] for v cci values not speci?ed in the data sheet: minimum v ih = 0.7 v cci and maximum v il = 0.3 v cci . [4] for v cci values not speci?ed in the data sheet: minimum v ih = 0.7 v cc(a) and maximum v il = 0.3 v cc(a) . [5] all unused data inputs of the device must be held at v cci or gnd to ensure proper device operation. d i off additional power-off leakage current a port; v i or v o = 0 v to 3.6 v; v cc(a) = 0 v to 0.2 v; v cc(b) = 1.1 v to 3.6 v -- 0.75 m a b port; v i or v o = 0 v to 3.6 v; v cc(b) = 0 v to 0.2 v; v cc(a) = 1.1 v to 3.6 v -- 0.75 m a dir input; v i or v o = 0 v to 3.6 v; v cc(a) = 0 v to 0.2 v; v cc(b) = 1.1 v to 3.6 v -- 0.75 m a i cc supply current a port; v i = gnd or v cci ; i o = 0 a [1] v cc(a) = v cc(b) = 1.1 v to 3.6 v - - 1.4 m a v cc(a) = 3.6 v; v cc(b) = 0 v - - 1.4 m a v cc(a) = 0 v; v cc(b) = 3.6 v - 0 - m a b port; v i = gnd or v cci ; i o = 0 a [1] v cc(a) = v cc(b) = 1.1 v to 3.6 v - - 1.4 m a v cc(a) = 3.6 v; v cc(b) = 0 v - 0 - m a v cc(a) = 0 v; v cc(b) = 3.6 v - - 1.4 m a a plus b port (i cc(a) + i cc(b) ); i o = 0 a; v i = gnd or v cci ; v cc(a) =v cc(b) = 1.1 v to 3.6 v [1] - - 1.4 m a d i cc additional supply current a port; v cc(a) = v cc(b) = 3.3 v; aportatv cc(a) - 0.6 v; dir at v cc(a) ; b port = open --75 m a b port; v cc(a) = v cc(b) = 3.3 v; bportatv cc(b) - 0.6 v; dir at gnd; a port = open --75 m a dir input; v cc(a) = v cc(b) = 3.3 v; aportatv cc(a) or gnd; b port = open; dir at v cc(a) - 0.6 v --75 m a table 7. static characteristics continued at recommended operating conditions; voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min typ max unit 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 11 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state 11. dynamic characteristics table 8. dynamic characteristics voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 8 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) c l = 5 pf; v cc(a) = 1.1 v to 1.3 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 2.8 15.4 28.0 2.4 28.3 31.2 ns v cc(b) = 1.4 v to 1.6 v 2.8 10.2 16.2 2.6 17.5 19.3 ns v cc(b) = 1.65 v to 1.95 v 2.4 8.1 13.0 2.2 14.4 15.9 ns v cc(b) = 2.3 v to 2.7 v 2.5 6.3 10.0 2.1 10.7 11.8 ns v cc(b) = 3.0 v to 3.6 v 2.3 5.6 9.0 1.9 9.7 10.7 ns t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 2.7 5.3 8.5 2.5 8.7 9.6 ns v cc(b) = 1.4 v to 1.6 v 2.9 5.3 8.4 2.7 8.7 9.7 ns v cc(b) = 1.65 v to 1.95 v 2.7 5.3 8.5 2.5 9.0 10.0 ns v cc(b) = 2.3 v to 2.7 v 2.7 5.3 8.7 2.5 8.9 9.9 ns v cc(b) = 3.0 v to 3.6 v 2.9 5.3 8.7 2.5 9.1 10.1 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 6.1 13.2 22.1 5.4 23.4 25.8 ns v cc(b) = 1.4 v to 1.6 v 5.0 9.3 13.9 4.4 15.2 16.7 ns v cc(b) = 1.65 v to 1.95 v 4.2 8.1 12.3 3.6 13.5 14.9 ns v cc(b) = 2.3 v to 2.7 v 3.3 6.3 9.3 2.9 10.2 11.2 ns v cc(b) = 3.0 v to 3.6 v 3.6 6.3 9.2 3.2 9.7 10.7 ns c l = 5 pf; v cc(a) = 1.4 v to 1.6 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 2.5 14.5 26.6 2.2 27.1 29.9 ns v cc(b) = 1.4 v to 1.6 v 2.5 9.4 14.5 2.3 15.9 17.5 ns v cc(b) = 1.65 v to 1.95 v 2.1 7.4 11.2 1.9 12.7 14.0 ns v cc(b) = 2.3 v to 2.7 v 2.2 5.5 8.0 1.8 8.9 9.8 ns v cc(b) = 3.0 v to 3.6 v 2.0 4.7 6.8 1.6 7.6 8.4 ns 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 12 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 2.0 3.8 5.3 1.9 5.7 6.3 ns v cc(b) = 1.4 v to 1.6 v 2.2 3.8 5.3 2.0 5.7 6.4 ns v cc(b) = 1.65 v to 1.95 v 2.1 3.8 5.5 1.8 5.9 6.6 ns v cc(b) = 2.3 v to 2.7 v 2.1 3.8 5.5 1.9 5.9 6.6 ns v cc(b) = 3.0 v to 3.6 v 2.2 3.8 5.5 1.9 6.0 6.6 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 5.7 12.7 21.0 5.2 22.3 24.6 ns v cc(b) = 1.4 v to 1.6 v 4.7 8.7 12.7 4.1 14.1 15.5 ns v cc(b) = 1.65 v to 1.95 v 3.9 7.4 10.9 3.3 12.3 13.5 ns v cc(b) = 2.3 v to 2.7 v 3.0 5.6 7.8 2.6 8.8 9.7 ns v cc(b) = 3.0 v to 3.6 v 3.3 5.5 7.4 2.9 8.1 8.9 ns c l = 5 pf; v cc(a) = 1.65 v to 1.95 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 2.4 14.2 26.1 2.0 26.5 29.2 ns v cc(b) = 1.4 v to 1.6 v 2.4 9.1 13.9 2.1 15.4 17.0 ns v cc(b) = 1.65 v to 1.95 v 2.0 7.0 10.7 1.7 12.1 13.4 ns v cc(b) = 2.3 v to 2.7 v 2.0 5.1 7.4 1.6 8.2 9.1 ns v cc(b) = 3.0 v to 3.6 v 1.9 4.3 6.1 1.5 6.9 7.7 ns t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 2.0 3.5 4.8 1.8 5.2 5.8 ns v cc(b) = 1.4 v to 1.6 v 2.1 3.5 4.8 1.9 5.2 5.7 ns v cc(b) = 1.65 v to 1.95 v 2.0 3.5 5.0 1.8 5.4 6.0 ns v cc(b) = 2.3 v to 2.7 v 2.0 3.5 4.9 1.8 5.4 6.0 ns v cc(b) = 3.0 v to 3.6 v 2.1 3.5 4.9 1.8 5.4 6.0 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 5.8 12.4 20.6 5.1 21.9 24.2 ns v cc(b) = 1.4 v to 1.6 v 4.6 8.4 12.2 3.9 13.5 14.9 ns v cc(b) = 1.65 v to 1.95 v 3.8 7.1 10.4 3.2 11.8 13.0 ns v cc(b) = 2.3 v to 2.7 v 2.9 5.2 7.3 2.5 8.3 9.1 ns v cc(b) = 3.0 v to 3.6 v 3.1 5.1 6.9 2.7 7.5 8.3 ns c l = 5 pf; v cc(a) = 2.3 v to 2.7 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 2.4 13.6 25.5 2.0 25.9 28.6 ns v cc(b) = 1.4 v to 1.6 v 2.3 8.5 13.3 2.1 14.7 16.2 ns v cc(b) = 1.65 v to 1.95 v 1.9 6.5 10.0 1.7 11.4 12.5 ns v cc(b) = 2.3 v to 2.7 v 1.9 4.6 6.7 1.6 7.5 8.3 ns v cc(b) = 3.0 v to 3.6 v 1.8 3.8 5.3 1.4 6.2 6.8 ns table 8. dynamic characteristics continued voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 8 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 13 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 1.4 2.5 3.3 1.3 3.6 4.0 ns v cc(b) = 1.4 v to 1.6 v 1.6 2.5 3.3 1.4 3.6 4.0 ns v cc(b) = 1.65 v to 1.95 v 1.5 2.5 3.4 1.3 3.8 4.2 ns v cc(b) = 2.3 v to 2.7 v 1.4 2.5 3.4 1.3 3.8 4.2 ns v cc(b) = 3.0 v to 3.6 v 1.6 2.5 3.4 1.3 3.7 4.1 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 5.8 12.3 20.4 5.1 21.8 24.0 ns v cc(b) = 1.4 v to 1.6 v 4.5 8.3 11.9 4.0 13.2 14.5 ns v cc(b) = 1.65 v to 1.95 v 3.7 7.0 10.0 3.2 11.3 12.5 ns v cc(b) = 2.3 v to 2.7 v 2.8 5.0 6.8 2.5 7.8 8.6 ns v cc(b) = 3.0 v to 3.6 v 3.1 4.9 6.4 2.7 7.0 7.8 ns c l = 5 pf; v cc(a) = 3.0 v to 3.6 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 2.3 13.1 24.9 2.0 25.2 27.8 ns v cc(b) = 1.4 v to 1.6 v 2.3 8.1 12.8 2.0 14.1 15.5 ns v cc(b) = 1.65 v to 1.95 v 1.9 6.1 9.5 1.7 10.8 12.0 ns v cc(b) = 2.3 v to 2.7 v 1.9 4.3 6.2 1.6 7.0 7.7 ns v cc(b) = 3.0 v to 3.6 v 1.7 3.5 5.0 1.4 5.7 6.3 ns t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 1.7 2.8 3.5 1.5 3.8 4.2 ns v cc(b) = 1.4 v to 1.6 v 1.8 2.8 3.5 1.7 3.8 4.2 ns v cc(b) = 1.65 v to 1.95 v 1.7 2.8 3.6 1.5 4.0 4.4 ns v cc(b) = 2.3 v to 2.7 v 1.7 2.8 3.6 1.5 3.9 4.4 ns v cc(b) = 3.0 v to 3.6 v 1.8 2.8 3.6 1.5 3.9 4.3 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 5.8 12.3 20.6 5.1 22.0 24.2 ns v cc(b) = 1.4 v to 1.6 v 4.6 8.3 11.8 4.0 13.1 14.5 ns v cc(b) = 1.65 v to 1.95 v 3.8 6.9 10.0 3.2 11.3 12.5 ns v cc(b) = 2.3 v to 2.7 v 2.8 5.0 6.7 2.5 7.6 8.4 ns v cc(b) = 3.0 v to 3.6 v 3.1 4.9 6.3 2.7 6.9 7.6 ns c l = 10 pf; v cc(a) = 1.1 v to 1.3 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 3.0 16.2 29.8 2.7 30.2 33.3 ns v cc(b) = 1.4 v to 1.6 v 3.0 10.8 17.5 2.7 18.6 20.5 ns v cc(b) = 1.65 v to 1.95 v 3.1 8.7 13.5 2.8 14.6 16.1 ns v cc(b) = 2.3 v to 2.7 v 2.7 6.8 10.5 2.4 11.2 12.4 ns v cc(b) = 3.0 v to 3.6 v 2.7 6.1 9.6 2.4 10.1 11.1 ns table 8. dynamic characteristics continued voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 8 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 14 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 3.2 6.5 9.9 3.1 10.2 11.3 ns v cc(b) = 1.4 v to 1.6 v 3.5 6.5 10.0 3.2 10.2 11.3 ns v cc(b) = 1.65 v to 1.95 v 3.7 6.5 9.8 3.5 10.1 11.1 ns v cc(b) = 2.3 v to 2.7 v 3.2 6.5 10.1 3.1 10.2 11.3 ns v cc(b) = 3.0 v to 3.6 v 3.6 6.5 10.1 3.2 10.3 11.4 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 6.4 14.3 23.5 5.8 24.8 27.4 ns v cc(b) = 1.4 v to 1.6 v 5.3 10.2 15.4 4.6 16.6 18.4 ns v cc(b) = 1.65 v to 1.95 v 5.2 9.2 13.6 4.7 14.7 16.2 ns v cc(b) = 2.3 v to 2.7 v 3.6 7.1 10.1 3.2 11.0 12.1 ns v cc(b) = 3.0 v to 3.6 v 4.4 7.6 10.8 3.8 11.4 12.5 ns c l = 10 pf; v cc(a) = 1.4 v to 1.6 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 2.7 15.3 28.3 2.4 29.0 31.9 ns v cc(b) = 1.4 v to 1.6 v 2.7 10.0 15.8 2.5 17.0 18.7 ns v cc(b) = 1.65 v to 1.95 v 2.8 7.9 11.8 2.5 13.0 14.4 ns v cc(b) = 2.3 v to 2.7 v 2.4 6.0 8.6 2.2 9.4 10.4 ns v cc(b) = 3.0 v to 3.6 v 2.4 5.2 7.4 2.1 8.0 8.9 ns t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 2.5 4.7 6.4 2.3 6.8 7.6 ns v cc(b) = 1.4 v to 1.6 v 2.7 4.7 6.5 2.4 6.9 7.6 ns v cc(b) = 1.65 v to 1.95 v 2.9 4.7 6.5 2.6 6.9 7.6 ns v cc(b) = 2.3 v to 2.7 v 2.5 4.7 6.5 2.3 6.9 7.6 ns v cc(b) = 3.0 v to 3.6 v 2.8 4.7 6.6 2.4 6.9 7.7 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 6.1 13.7 22.4 5.6 23.8 26.3 ns v cc(b) = 1.4 v to 1.6 v 5.0 9.6 14.2 4.3 15.5 17.1 ns v cc(b) = 1.65 v to 1.95 v 4.9 8.5 12.3 4.4 13.4 14.8 ns v cc(b) = 2.3 v to 2.7 v 3.3 6.4 8.7 3.0 9.6 10.6 ns v cc(b) = 3.0 v to 3.6 v 4.1 6.7 9.1 3.5 9.7 10.8 ns c l = 10 pf; v cc(a) = 1.65 v to 1.95 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 2.6 15.0 27.8 2.3 28.3 31.2 ns v cc(b) = 1.4 v to 1.6 v 2.6 9.7 15.2 2.3 16.5 18.2 ns v cc(b) = 1.65 v to 1.95 v 2.7 7.5 11.2 2.3 12.4 13.7 ns v cc(b) = 2.3 v to 2.7 v 2.3 5.6 7.9 2.0 8.8 9.7 ns v cc(b) = 3.0 v to 3.6 v 2.3 4.8 6.7 1.9 7.4 8.2 ns table 8. dynamic characteristics continued voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 8 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 15 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 2.5 4.6 6.2 2.4 6.6 7.3 ns v cc(b) = 1.4 v to 1.6 v 2.7 4.6 6.3 2.5 6.7 7.4 ns v cc(b) = 1.65 v to 1.95 v 2.9 4.6 6.3 2.7 6.7 7.4 ns v cc(b) = 2.3 v to 2.7 v 2.5 4.6 6.2 2.4 6.7 7.4 ns v cc(b) = 3.0 v to 3.6 v 2.8 4.6 6.3 2.5 6.7 7.4 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 6.1 13.5 22.1 5.4 23.4 25.8 ns v cc(b) = 1.4 v to 1.6 v 5.0 9.3 13.6 4.2 14.9 16.5 ns v cc(b) = 1.65 v to 1.95 v 4.8 8.3 11.8 4.2 13.0 14.3 ns v cc(b) = 2.3 v to 2.7 v 3.2 6.0 8.1 2.8 9.1 10.0 ns v cc(b) = 3.0 v to 3.6 v 3.9 6.4 8.5 3.3 9.2 10.2 ns c l = 10 pf; v cc(a) = 2.3 v to 2.7 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 2.5 14.4 27.2 2.3 27.8 30.6 ns v cc(b) = 1.4 v to 1.6 v 2.5 9.1 14.6 2.3 15.8 17.4 ns v cc(b) = 1.65 v to 1.95 v 2.6 7.0 10.5 2.2 11.7 12.9 ns v cc(b) = 2.3 v to 2.7 v 2.2 5.1 7.2 1.9 8.0 8.9 ns v cc(b) = 3.0 v to 3.6 v 2.2 4.3 5.9 1.9 6.6 7.3 ns t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 1.8 3.3 4.2 1.7 4.6 5.1 ns v cc(b) = 1.4 v to 1.6 v 2.0 3.3 4.4 1.8 4.7 5.2 ns v cc(b) = 1.65 v to 1.95 v 2.1 3.3 4.4 2.0 4.7 5.2 ns v cc(b) = 2.3 v to 2.7 v 1.8 3.3 4.3 1.7 4.7 5.2 ns v cc(b) = 3.0 v to 3.6 v 2.1 3.3 4.4 1.8 4.7 5.2 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 6.1 13.4 21.8 5.4 23.2 25.6 ns v cc(b) = 1.4 v to 1.6 v 4.9 9.2 13.3 4.2 14.6 16.1 ns v cc(b) = 1.65 v to 1.95 v 4.8 8.1 11.4 4.2 12.5 13.8 ns v cc(b) = 2.3 v to 2.7 v 3.1 5.8 7.7 2.8 8.6 9.5 ns v cc(b) = 3.0 v to 3.6 v 3.9 6.2 8.0 3.3 8.7 9.6 ns c l = 10 pf; v cc(a) = 3.0 v to 3.6 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 2.5 14.0 26.6 2.2 27.0 29.8 ns v cc(b) = 1.4 v to 1.6 v 2.5 8.7 14.0 2.3 15.1 16.7 ns v cc(b) = 1.65 v to 1.95 v 2.5 6.6 10.1 2.2 11.2 12.4 ns v cc(b) = 2.3 v to 2.7 v 2.2 4.8 6.8 1.9 7.5 8.3 ns v cc(b) = 3.0 v to 3.6 v 2.1 4.0 5.5 1.9 6.1 6.8 ns table 8. dynamic characteristics continued voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 8 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 16 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 2.3 4.0 5.0 2.2 5.3 5.9 ns v cc(b) = 1.4 v to 1.6 v 2.5 4.0 5.2 2.3 5.4 6.0 ns v cc(b) = 1.65 v to 1.95 v 2.6 4.0 5.2 2.5 5.4 6.0 ns v cc(b) = 2.3 v to 2.7 v 2.3 4.0 5.1 2.2 5.4 6.0 ns v cc(b) = 3.0 v to 3.6 v 2.6 4.0 5.2 2.3 5.4 6.0 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 6.2 13.5 22.0 5.5 23.4 25.8 ns v cc(b) = 1.4 v to 1.6 v 4.9 9.2 13.2 4.2 14.6 16.1 ns v cc(b) = 1.65 v to 1.95 v 4.8 8.1 11.3 4.3 12.4 13.7 ns v cc(b) = 2.3 v to 2.7 v 3.1 5.8 7.6 2.8 8.5 9.4 ns v cc(b) = 3.0 v to 3.6 v 3.9 6.2 7.9 3.3 8.5 9.5 ns c l = 15 pf; v cc(a) = 1.1 v to 1.3 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 3.4 16.9 31.6 3.0 32.0 35.2 ns v cc(b) = 1.4 v to 1.6 v 3.7 11.3 18.2 3.1 19.5 21.5 ns v cc(b) = 1.65 v to 1.95 v 3.2 9.1 14.3 3.0 15.6 17.2 ns v cc(b) = 2.3 v to 2.7 v 3.2 7.3 11.2 2.8 12.0 13.2 ns v cc(b) = 3.0 v to 3.6 v 3.1 6.5 10.2 2.6 10.7 11.8 ns t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 3.9 7.6 11.4 3.8 11.7 12.9 ns v cc(b) = 1.4 v to 1.6 v 4.5 7.6 11.3 4.1 11.7 12.9 ns v cc(b) = 1.65 v to 1.95 v 4.2 7.6 11.3 4.1 11.7 12.9 ns v cc(b) = 2.3 v to 2.7 v 3.9 7.6 11.7 3.8 11.9 13.1 ns v cc(b) = 3.0 v to 3.6 v 4.5 7.6 11.7 4.1 11.9 13.1 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 7.2 15.4 24.9 6.5 26.3 29.0 ns v cc(b) = 1.4 v to 1.6 v 6.3 11.1 16.3 5.4 17.7 19.5 ns v cc(b) = 1.65 v to 1.95 v 5.7 10.4 15.0 5.2 16.2 17.9 ns v cc(b) = 2.3 v to 2.7 v 4.1 7.9 11.4 3.8 12.1 13.4 ns v cc(b) = 3.0 v to 3.6 v 5.3 8.8 12.2 4.9 12.7 14.1 ns c l = 15 pf; v cc(a) = 1.4 v to 1.6 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 3.1 16.1 30.1 2.8 30.7 33.8 ns v cc(b) = 1.4 v to 1.6 v 3.4 10.5 16.5 2.8 17.9 19.7 ns v cc(b) = 1.65 v to 1.95 v 3.0 8.4 12.6 2.7 13.9 15.4 ns v cc(b) = 2.3 v to 2.7 v 2.9 6.4 9.3 2.5 10.1 11.2 ns v cc(b) = 3.0 v to 3.6 v 2.8 5.6 8.0 2.3 8.7 9.6 ns table 8. dynamic characteristics continued voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 8 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 17 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 3.1 5.6 7.6 2.9 8.0 8.9 ns v cc(b) = 1.4 v to 1.6 v 3.5 5.6 7.5 3.1 8.0 8.8 ns v cc(b) = 1.65 v to 1.95 v 3.3 5.6 7.6 3.1 8.0 8.9 ns v cc(b) = 2.3 v to 2.7 v 3.1 5.6 7.7 2.9 8.1 9.0 ns v cc(b) = 3.0 v to 3.6 v 3.5 5.6 7.8 3.1 8.1 9.0 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 6.9 14.9 23.8 6.4 25.3 27.9 ns v cc(b) = 1.4 v to 1.6 v 6.0 10.5 15.1 5.2 16.6 18.3 ns v cc(b) = 1.65 v to 1.95 v 5.4 9.7 13.7 5.0 15.0 16.5 ns v cc(b) = 2.3 v to 2.7 v 3.8 7.2 9.9 3.5 10.7 11.9 ns v cc(b) = 3.0 v to 3.6 v 5.0 8.0 10.5 4.6 11.1 12.3 ns c l = 15 pf; v cc(a) = 1.65 v to 1.95 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 3.0 15.8 29.6 2.6 30.1 33.2 ns v cc(b) = 1.4 v to 1.6 v 3.2 10.2 15.9 2.6 17.4 19.2 ns v cc(b) = 1.65 v to 1.95 v 2.8 8.0 12.0 2.5 13.4 14.8 ns v cc(b) = 2.3 v to 2.7 v 2.8 6.0 8.6 2.3 9.5 10.5 ns v cc(b) = 3.0 v to 3.6 v 2.6 5.2 7.3 2.2 8.0 8.9 ns t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 3.2 5.8 7.6 3.1 8.0 8.9 ns v cc(b) = 1.4 v to 1.6 v 3.7 5.8 7.6 3.3 8.1 8.9 ns v cc(b) = 1.65 v to 1.95 v 3.5 5.8 7.7 3.3 8.1 9.0 ns v cc(b) = 2.3 v to 2.7 v 3.2 5.8 7.8 3.1 8.2 9.0 ns v cc(b) = 3.0 v to 3.6 v 3.7 5.8 7.8 3.4 8.1 9.0 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 6.9 14.7 23.4 6.2 24.9 27.4 ns v cc(b) = 1.4 v to 1.6 v 5.9 10.2 14.6 5.0 16.0 17.7 ns v cc(b) = 1.65 v to 1.95 v 5.3 9.4 13.2 4.8 14.5 16.0 ns v cc(b) = 2.3 v to 2.7 v 3.7 6.8 9.4 3.4 10.2 11.3 ns v cc(b) = 3.0 v to 3.6 v 4.9 7.6 9.9 4.4 10.6 11.7 ns c l = 15 pf; v cc(a) = 2.3 v to 2.7 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 3.0 15.2 29.0 2.6 29.5 32.5 ns v cc(b) = 1.4 v to 1.6 v 3.1 9.6 15.3 2.6 16.7 18.4 ns v cc(b) = 1.65 v to 1.95 v 2.7 7.5 11.3 2.5 12.6 13.9 ns v cc(b) = 2.3 v to 2.7 v 2.7 5.5 7.9 2.3 8.7 9.6 ns v cc(b) = 3.0 v to 3.6 v 2.5 4.7 6.5 2.1 7.2 8.0 ns table 8. dynamic characteristics continued voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 8 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 18 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 2.4 4.1 5.2 2.2 5.6 6.2 ns v cc(b) = 1.4 v to 1.6 v 2.7 4.1 5.3 2.4 5.7 6.3 ns v cc(b) = 1.65 v to 1.95 v 2.5 4.1 5.4 2.4 5.7 6.3 ns v cc(b) = 2.3 v to 2.7 v 2.4 4.1 5.4 2.2 5.7 6.3 ns v cc(b) = 3.0 v to 3.6 v 2.7 4.1 5.3 2.4 5.6 6.2 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 6.9 14.6 23.2 6.2 24.7 27.2 ns v cc(b) = 1.4 v to 1.6 v 5.9 10.1 14.2 5.0 15.6 17.3 ns v cc(b) = 1.65 v to 1.95 v 5.3 9.2 12.8 4.8 14.0 15.5 ns v cc(b) = 2.3 v to 2.7 v 3.7 6.7 8.9 3.4 9.8 10.8 ns v cc(b) = 3.0 v to 3.6 v 4.8 7.4 9.4 4.4 10.1 11.2 ns c l = 15 pf; v cc(a) = 3.0 v to 3.6 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 2.9 14.7 28.3 2.6 28.8 31.7 ns v cc(b) = 1.4 v to 1.6 v 3.1 9.2 14.7 2.6 16.0 17.7 ns v cc(b) = 1.65 v to 1.95 v 2.7 7.1 10.9 2.4 12.1 13.4 ns v cc(b) = 2.3 v to 2.7 v 2.7 5.2 7.4 2.2 8.2 9.1 ns v cc(b) = 3.0 v to 3.6 v 2.5 4.5 6.1 2.1 6.8 7.5 ns t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 3.1 5.3 6.5 3.0 6.9 7.6 ns v cc(b) = 1.4 v to 1.6 v 3.5 5.3 6.6 3.2 7.0 7.7 ns v cc(b) = 1.65 v to 1.95 v 3.3 5.3 6.7 3.2 7.0 7.8 ns v cc(b) = 2.3 v to 2.7 v 3.1 5.3 6.8 3.0 7.1 7.8 ns v cc(b) = 3.0 v to 3.6 v 3.5 5.3 6.6 3.2 6.9 7.6 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 6.9 14.6 23.4 6.3 24.9 27.4 ns v cc(b) = 1.4 v to 1.6 v 5.9 10.1 14.2 5.0 15.6 17.2 ns v cc(b) = 1.65 v to 1.95 v 5.3 9.2 12.7 4.8 13.9 15.4 ns v cc(b) = 2.3 v to 2.7 v 3.7 6.6 8.8 3.4 9.6 10.6 ns v cc(b) = 3.0 v to 3.6 v 4.8 7.4 9.3 4.4 10.0 11.0 ns c l = 30 pf; v cc(a) = 1.1 v to 1.3 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 4.2 19.1 36.0 3.8 36.8 40.5 ns v cc(b) = 1.4 v to 1.6 v 4.5 12.8 20.6 4.0 22.0 24.2 ns v cc(b) = 1.65 v to 1.95 v 4.2 10.4 16.2 3.8 17.4 19.2 ns v cc(b) = 2.3 v to 2.7 v 4.0 8.3 12.4 3.5 13.2 14.5 ns v cc(b) = 3.0 v to 3.6 v 4.0 7.5 11.5 3.7 12.5 13.8 ns table 8. dynamic characteristics continued voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 8 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 19 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 5.6 11.0 15.7 5.5 16.2 17.9 ns v cc(b) = 1.4 v to 1.6 v 6.1 11.0 15.6 6.0 15.9 17.5 ns v cc(b) = 1.65 v to 1.95 v 6.6 11.0 15.5 6.5 15.8 17.4 ns v cc(b) = 2.3 v to 2.7 v 5.6 11.0 15.6 5.5 15.8 17.5 ns v cc(b) = 3.0 v to 3.6 v 7.0 11.0 15.9 6.6 16.7 18.4 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 8.7 18.9 29.0 8.1 30.5 33.6 ns v cc(b) = 1.4 v to 1.6 v 7.3 13.8 19.3 6.8 20.7 22.8 ns v cc(b) = 1.65 v to 1.95 v 8.1 13.7 19.2 7.7 20.3 22.4 ns v cc(b) = 2.3 v to 2.7 v 5.2 10.3 14.0 4.9 14.7 16.2 ns v cc(b) = 3.0 v to 3.6 v 8.1 12.5 16.5 7.5 18.0 19.9 ns c l = 30 pf; v cc(a) = 1.4 v to 1.6 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 4.0 18.2 34.5 3.5 35.5 39.1 ns v cc(b) = 1.4 v to 1.6 v 4.2 12.0 18.9 3.7 20.3 22.4 ns v cc(b) = 1.65 v to 1.95 v 3.9 9.6 14.4 3.5 15.8 17.4 ns v cc(b) = 2.3 v to 2.7 v 3.8 7.5 10.4 3.2 11.4 12.6 ns v cc(b) = 3.0 v to 3.6 v 3.7 6.7 9.3 3.4 10.4 11.4 ns t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 4.4 8.3 10.8 4.3 11.4 12.6 ns v cc(b) = 1.4 v to 1.6 v 4.8 8.3 10.7 4.6 11.2 12.3 ns v cc(b) = 1.65 v to 1.95 v 5.2 8.3 10.8 5.0 11.2 12.4 ns v cc(b) = 2.3 v to 2.7 v 4.4 8.3 10.8 4.3 11.1 12.3 ns v cc(b) = 3.0 v to 3.6 v 5.5 8.3 11.0 5.1 11.8 13.0 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 8.4 18.3 27.9 7.9 29.5 32.5 ns v cc(b) = 1.4 v to 1.6 v 7.1 13.2 18.2 6.6 19.6 21.6 ns v cc(b) = 1.65 v to 1.95 v 7.8 13.1 17.9 7.4 19.1 21.0 ns v cc(b) = 2.3 v to 2.7 v 4.9 9.6 12.6 4.6 13.4 14.8 ns v cc(b) = 3.0 v to 3.6 v 7.7 11.7 14.8 7.2 16.3 18.0 ns c l = 30 pf; v cc(a) = 1.65 v to 1.95 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 3.9 18.0 34.0 3.4 34.9 38.4 ns v cc(b) = 1.4 v to 1.6 v 4.1 11.7 18.3 3.5 19.8 21.9 ns v cc(b) = 1.65 v to 1.95 v 3.8 9.2 13.9 3.4 15.2 16.8 ns v cc(b) = 2.3 v to 2.7 v 3.6 7.1 9.8 3.1 10.8 11.9 ns v cc(b) = 3.0 v to 3.6 v 3.5 6.3 8.6 3.2 9.7 10.7 ns table 8. dynamic characteristics continued voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 8 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 20 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 5.0 9.2 11.7 4.8 12.3 13.6 ns v cc(b) = 1.4 v to 1.6 v 5.4 9.2 11.7 5.3 12.1 13.4 ns v cc(b) = 1.65 v to 1.95 v 5.8 9.1 11.9 5.7 12.3 13.6 ns v cc(b) = 2.3 v to 2.7 v 5.0 9.1 11.7 4.8 12.1 13.4 ns v cc(b) = 3.0 v to 3.6 v 6.2 9.2 11.9 5.8 12.7 14.1 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 8.4 18.1 27.6 7.8 29.1 32.0 ns v cc(b) = 1.4 v to 1.6 v 7.0 12.9 17.7 6.4 19.1 21.0 ns v cc(b) = 1.65 v to 1.95 v 7.7 12.8 17.4 7.2 18.6 20.6 ns v cc(b) = 2.3 v to 2.7 v 4.8 9.3 12.0 4.5 12.9 14.2 ns v cc(b) = 3.0 v to 3.6 v 7.6 11.3 14.2 7.0 15.8 17.4 ns c l = 30 pf; v cc(a) = 2.3 v to 2.7 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 3.8 17.4 33.4 3.4 34.3 37.8 ns v cc(b) = 1.4 v to 1.6 v 4.0 11.1 17.7 3.5 19.1 21.1 ns v cc(b) = 1.65 v to 1.95 v 3.7 8.7 13.2 3.3 14.4 15.9 ns v cc(b) = 2.3 v to 2.7 v 3.4 6.5 9.1 3.0 10.0 11.1 ns v cc(b) = 3.0 v to 3.6 v 3.5 5.7 7.8 3.1 8.9 9.8 ns t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 3.6 6.5 8.1 3.5 8.5 9.4 ns v cc(b) = 1.4 v to 1.6 v 3.9 6.5 8.1 3.8 8.5 9.4 ns v cc(b) = 1.65 v to 1.95 v 4.2 6.5 8.3 4.1 8.6 9.5 ns v cc(b) = 2.3 v to 2.7 v 3.6 6.5 8.2 3.5 8.5 9.4 ns v cc(b) = 3.0 v to 3.6 v 4.5 6.5 8.2 4.2 8.9 9.8 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 8.4 18.0 27.4 7.8 28.8 31.8 ns v cc(b) = 1.4 v to 1.6 v 7.0 12.8 17.3 6.4 18.7 20.6 ns v cc(b) = 1.65 v to 1.95 v 7.7 12.6 17.0 7.2 18.2 20.0 ns v cc(b) = 2.3 v to 2.7 v 4.8 9.1 11.6 4.5 12.4 13.7 ns v cc(b) = 3.0 v to 3.6 v 7.6 11.1 13.7 7.0 15.3 16.9 ns c l = 30 pf; v cc(a) = 3.0 v to 3.6 v t pd propagation delay a to b or b to a; see figure 6 [2] v cc(b) = 1.1 v to 1.3 v 3.8 16.9 32.8 3.3 33.5 36.9 ns v cc(b) = 1.4 v to 1.6 v 3.9 10.7 17.1 3.5 18.5 20.4 ns v cc(b) = 1.65 v to 1.95 v 3.7 8.3 12.7 3.3 13.9 15.4 ns v cc(b) = 2.3 v to 2.7 v 3.2 6.3 8.6 2.9 9.5 10.5 ns v cc(b) = 3.0 v to 3.6 v 3.4 5.5 7.4 3.1 8.4 9.3 ns table 8. dynamic characteristics continued voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 8 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 21 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state t dis disable time dir to a; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 5.0 9.0 11.0 4.9 11.5 12.7 ns v cc(b) = 1.4 v to 1.6 v 5.4 9.0 11.1 5.3 11.4 12.6 ns v cc(b) = 1.65 v to 1.95 v 5.9 9.0 11.3 5.7 11.6 12.8 ns v cc(b) = 2.3 v to 2.7 v 5.0 9.0 11.2 4.9 11.4 12.6 ns v cc(b) = 3.0 v to 3.6 v 6.2 9.0 11.2 5.9 11.9 13.2 ns dir to b; see figure 7 [3] v cc(b) = 1.1 v to 1.3 v 8.4 18.1 27.6 7.8 29.1 32.0 ns v cc(b) = 1.4 v to 1.6 v 7.0 12.8 17.3 6.4 18.6 20.6 ns v cc(b) = 1.65 v to 1.95 v 7.7 12.6 17.0 7.2 18.1 19.9 ns v cc(b) = 2.3 v to 2.7 v 4.8 9.0 11.5 4.5 12.3 13.6 ns v cc(b) = 3.0 v to 3.6 v 7.6 11.1 13.6 7.0 15.1 16.7 ns table 8. dynamic characteristics continued voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 8 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 22 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state [1] all typical values are measured at nominal v cc(a) and v cc(b) . [2] t pd is the same as t plh and t phl . [3] t dis is the same as t plz and t phz . [4] c pd is used to determine the dynamic power dissipation (p d in m w). p d =c pd v cc 2 f i n+ s (c l v cc 2 f o ) where: f i = input frequency in mhz; f o = output frequency in mhz; c l = load capacitance in pf; v cc = supply voltage in v; n = number of inputs switching; s (c l v cc 2 f o ) = sum of the outputs. [5] f i = 1 mhz; v i = gnd to v cc c l = 5 pf, 10 pf, 15 pf and 30 pf c pd power dissipation capacitance a port; (direction a to b) [4] [5] v cc(a) = v cc(b) = 1.2 v - 0.6 - - - - pf v cc(a) = v cc(b) = 1.5 v - 0.7 - - - - pf v cc(a) = v cc(b) = 1.8 v - 0.7 - - - - pf v cc(a) = v cc(b) = 2.5 v - 0.9 - - - - pf v cc(a) = v cc(b) = 3.3 v - 1.1 - - - - pf a port; (direction b to a) [4] [5] v cc(a) = v cc(b) = 1.2 v - 3.7 - - - - pf v cc(a) = v cc(b) = 1.5 v - 3.8 - - - - pf v cc(a) = v cc(b) = 1.8 v - 4.0 - - - - pf v cc(a) = v cc(b) = 2.5 v - 4.6 - - - - pf v cc(a) = v cc(b) = 3.3 v - 5.2 - - - - pf b port; (direction a to b) [4] [5] v cc(a) = v cc(b) = 1.2 v - 3.7 - - - - pf v cc(a) = v cc(b) = 1.5 v - 3.8 - - - - pf v cc(a) = v cc(b) = 1.8 v - 4.0 - - - - pf v cc(a) = v cc(b) = 2.5 v - 4.6 - - - - pf v cc(a) = v cc(b) = 3.3 v - 5.2 - - - - pf b port; (direction b to a) [4] [5] v cc(a) = v cc(b) = 1.2 v - 0.6 - - - - pf v cc(a) = v cc(b) = 1.5 v - 0.7 - - - - pf v cc(a) = v cc(b) = 1.8 v - 0.7 - - - - pf v cc(a) = v cc(b) = 2.5 v - 0.9 - - - - pf v cc(a) = v cc(b) = 3.3 v - 1.1 - - - - pf table 8. dynamic characteristics continued voltages are referenced to gnd (groun d = 0 v); for test circuit see figure 8 . symbol parameter conditions 25 c - 40 c to +125 c unit min typ [1] max min max (85 c) max (125 c) 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 23 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state 12. waveforms [1] v cci is the supply voltage associated with the data input port. [2] v cco is the supply voltage associated with the output port. measurement points are given in t ab le 9 . v ol and v oh are typical output voltage drops that occur with the output load. fig 6. the data input (a, b) to output (b, a) propagation delay times 001aae967 a, b input b, a output t plh t phl gnd v i v oh v m v m v ol measurement points are given in t ab le 9 . v ol and v oh are typical output voltage drops that occur with the output load. fig 7. enable and disable times 001aae968 t pzl t pzh t phz t plz gnd gnd v i v cco v ol v oh v m v m v m v x v y outputs disabled outputs enabled outputs enabled output low-to-off off-to-low output high-to-off off-to-high dir input table 9. measurement points supply voltage input [1] output [2] v cc(a) , v cc(b) v m v m v x v y 1.1 v to 1.6 v 0.5 v cci 0.5 v cco v ol + 0.1 v v oh - 0.1 v 1.65 v to 2.7 v 0.5 v cci 0.5 v cco v ol + 0.15 v v oh - 0.15 v 3.0 v to 3.6 v 0.5 v cci 0.5 v cco v ol + 0.3 v v oh - 0.3 v 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 24 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state [1] v cci is the supply voltage associated with the data input port. [2] for measuring enable and disable times r l =5k w , for measuring propagation delays, setup and hold times and pulse width r l =1m w . [3] v cco is the supply voltage associated with the output port. test data is given in t ab le 10 . r l = load resistance. c l = load capacitance including jig and probe capacitance. r t = termination resistance. v ext = external voltage for measuring switching times. fig 8. load circuitry for switching times 001aac521 pulse generator dut r t v i v o v ext v cc r l 5 k w c l table 10. test data supply voltage input load v ext v cc(a) , v cc(b) v i [1] t r = t f c l r l [2] t plh , t phl t pzh , t phz t pzl , t plz [3] 1.1 v to 3.6 v v cci 3.0 ns 5 pf, 10 pf, 15 pf and 30 pf 5k w or 1 m w open gnd 2 v cco 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 25 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state 13. application information 13.1 unidirectional logic level-shifting application the circuit given in figure 9 is an example of the 74aup1t45 being used in an unidirectional logic level-shifting application. fig 9. unidirectional logic level-shifting application table 11. description unidirectional logic level-shifting application pin name function description 1v cc(a) v cc1 supply voltage of system-1 (1.1 v to 3.6 v) 2 gnd gnd device ground (0 v) 3 a out output level depends on v cc1 voltage 4 b in input threshold value depends on v cc2 voltage 5 dir dir the gnd (low level) determines b port to a port direction 6v cc(b) v cc2 supply voltage of system-2 (1.1 v to 3.6 v) 74aup1t45 v cc(a) v cc(b) v cc2 v cc1 v cc1 gnd ab 001aae969 1 2 3 6 dir 5 4 v cc2 system-2 system-1 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 26 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state 13.2 bidirectional logic level-shifting application figure 10 shows the 74aup1t45 being used in a bidirectional logic level-shifting application. since the device does not have an output enable (oe) pin, the system designer should take precautions to avoid bus contention between system-1 and system-2 when changing directions. t ab le 12 gives a sequence that will illustrate data transmission from system-1 to system-2 and then from system-2 to system-1. [1] system-1 and system-2 must use the same conditions, i.e., both pull-up or both pull-down. [2] h = high voltage level; l = low voltage level; z = high-impedance off-state. system-1 and system-2 must use the same conditions, i.e., both pull-up or both pull-down. fig 10. bidirectional logic level-shifting application system-1 i/o-2 i/o-1 74aup1t45 v cc(a) v cc(b) v cc2 v cc1 v cc1 dir ctrl gnd ab 001aae970 1 2 3 6 dir 5 4 v cc2 pull-up/down or bushold system-2 pull-up/down or bushold table 12. description bidirectional logic level-shifting application [1] [2] state dir ctrl i/o-1 i/o-2 description 1 h output input system-1 data to system-2 2 h z z system-2 is getting ready to send data to system-1. i/o-1 and i/o-2 are disabled. the bus-line state depends on the pull-up or pull-down. 3 l z z dir bit is ?ipped. i/o-1 and i/o-2 still are disabled. the bus-line state depends on the pull-up or pull-down. 4 l input output system-2 data to system-1 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 27 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state 13.3 power-up considerations a proper power-up sequence always should be followed to avoid excessive supply current, bus contention, oscillations, or other anomalies. take the following precautions to guard against such power-up problems: ? connect ground before any supply voltage is applied. ? power-up v cc(a) . ? v cc(b) can be ramped up along with or after v cc(a) . 13.4 enable times calculate the enable times for the 74aup1t45 using the following formulas: ? t pzh (dir to a) = t plz (dir to b) + t plh (b to a) ? t pzl (dir to a) = t phz (dir to b) + t phl (b to a) ? t pzh (dir to b) = t plz (dir to a) + t plh (a to b) ? t pzl (dir to b) = t phz (dir to a) + t phl (a to b) in a bidirectional application, these enable times provide the maximum delay from the time the dir bit is switched until an output is expected. for example, if the 74aup1t45 initially is transmitting from a to b, then the dir bit is switched, the b port of the device must be disabled before presenting it with an input. after the b port has been disabled, an input signal applied to it appears on the corresponding a port after the speci?ed propagation delay. 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 28 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state 14. package outline fig 11. package outline sot363 (sc-88) references outline version european projection issue date iec jedec jeita sot363 sc-88 wb m b p d e 1 e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface-mounted package; 6 leads sot363 unit a 1 max b p cd e e 1 h e l p qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 04-11-08 06-03-16 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 29 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state fig 12. package outline sot886 (xson6) terminal 1 index area references outline version european projection issue date iec jedec jeita sot886 mo-252 sot886 04-07-15 04-07-22 dimensions (mm are the original dimensions) xson6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm d e e 1 e a 1 b l l 1 e 1 0 1 2 mm scale notes 1. including plating thickness. 2. can be visible in some manufacturing processes. unit mm 0.25 0.17 1.5 1.4 0.35 0.27 a 1 max b e 1.05 0.95 d ee 1 l 0.40 0.32 l 1 0.5 0.6 a (1) max 0.5 0.04 1 6 2 5 3 4 6 (2) 4 (2) a 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 30 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state fig 13. package outline sot891 (xson6) terminal 1 index area references outline version european projection issue date iec jedec jeita sot891 sot891 05-03-11 05-04-06 xson6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm d e e 1 e a 1 b l l 1 e 1 0 1 2 mm scale dimensions (mm are the original dimensions) unit mm 0.20 0.12 1.05 0.95 0.35 0.27 a 1 max b e 1.05 0.95 d ee 1 l 0.40 0.32 l 1 0.35 0.55 a max 0.5 0.04 1 6 2 5 3 4 a 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 31 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state 15. abbreviations 16. revision history table 13. abbreviations acronym description cdm charged device model cmos complementary metal oxide semiconductor dut device under test esd electrostatic discharge hbm human body model mm machine model ttl transistor-transistor logic table 14. revision history document id release date data sheet status change notice supersedes 74aup1t45_1 20061018 product data sheet - - 74aup1t45_1 ? nxp b.v. 2006. all rights reserved. product data sheet rev. 01 18 october 2006 32 of 33 nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state 17. legal information 17.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 17.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 17.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 17.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 18. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation. nxp semiconductors 74aup1t45 low-power dual supply translating transceiver; 3-state ? nxp b.v. 2006. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 18 october 2006 document identifier: 74aup1t45_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 19. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 functional description . . . . . . . . . . . . . . . . . . . 3 8 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 9 recommended operating conditions. . . . . . . . 4 10 static characteristics. . . . . . . . . . . . . . . . . . . . . 5 11 dynamic characteristics . . . . . . . . . . . . . . . . . 11 12 waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 13 application information. . . . . . . . . . . . . . . . . . 25 13.1 unidirectional logic level-shifting application. . 25 13.2 bidirectional logic level-shifting application. . . 26 13.3 power-up considerations . . . . . . . . . . . . . . . . 27 13.4 enable times . . . . . . . . . . . . . . . . . . . . . . . . . . 27 14 package outline . . . . . . . . . . . . . . . . . . . . . . . . 28 15 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 31 16 revision history . . . . . . . . . . . . . . . . . . . . . . . . 31 17 legal information. . . . . . . . . . . . . . . . . . . . . . . 32 17.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 32 17.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 17.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 17.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 18 contact information. . . . . . . . . . . . . . . . . . . . . 32 19 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 |
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